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| SMD Type MOS Field Effect Transistor KPA1758 IC IC Features Dual MOS FET chips in small package 2.5 V gate drive type low on-state resistance RDS(on)1 = 30 m RDS(on)2 = 40 m (MAX.) (VGS = 4.5 V, ID = 3.0 A) (MAX.) (VGS = 2.5 V, ID = 3.0 A) 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 Low Ciss : Ciss = 1100 pF (TYP.) Built-in G-S protection diode Small and surface mount package Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Drain Current (Pulse) *1 Total Power Dissipation (1 unit) *2 Total Power Dissipation (2 unit) *2 Channel Temperature Storage Temperature *1 PW 10 s, Duty cycle 1% Symbol VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg Rating 30 12.0 6.0 24 1.7 2.0 150 -55 to + 150 Unit V V A A W W *2 Mounted on ceramic substrate of 2000 mm2 X1.1 mm www.kexin.com.cn 1 SMD Type KPA1758 Electrical Characteristics Ta = 25 Parameter Drain to Source On-state Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode forward Voltage Symbol RDS(on)1 RDS(on)2 VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) IF = 6.0 A, VGS = 0 ID = 6.0 A, VDD = 24 V, VGS = 4.0 V ID = 3.0 A, VGS(on) = 4.0 V, VDD = 15 V,RG = 10 VDS = 10 V, VGS = 0, f = 1 MHz Testconditons VGS = 4.5 V, ID = 3.5 A VGS = 2.5 V, ID = 3.5 A VDS = 10 V, ID = 1.0 mA VDS = 10 V, ID = 3.5 A VDS = 30 V, VGS = 0 VGS = 12.0 V, VDS = 0 1100 370 170 50 190 550 490 15.0 2.0 6.5 0.8 0.5 5.0 Min Typ 20 25 0.8 13 10 10 Max 30 40 1.5 Unit m m V S A A pF pF pF ns ns ns ns nC nC nC V IC IC 2 www.kexin.com.cn |
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